InAs nanowires on Si for advanced mid-wavelength infrared photodetectors

The International Symposium on Photonics and Optoelectronics(SOPO 2014)——We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si (111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si (111) substrates through indium droplets- assisted growth. Scanning electron microscopy studies revealed that the lateral dimensions and density of nanowires are defined by the indium droplets. High-resolution transmission electron microscopy and X-ray diffraction indicate the nanowires have a dominant zinc-blende crystal structure with a low density of staking faults. This technique eliminates the need for foreign catalyst and/or template thereby unravelling a controllable, cost effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.

关键词: 硅纳米线 中波长红外线光电探测器 铟液滴

主讲人:A.P. Qiandong Zhuang 机构:Physics Department,Lancaster University

时长:0:14:53 年代:2014年