High fmax graphene FET for RF applications（2）
2014中国国际石墨烯创新大会（Grap-China 2014）——Graphene field effect transistor (GFET) has attracted significant attention for potential radio-frequency(RF) applications due to its outstanding carrier mobility and high carrier saturation velocity.Here, we report an improved self-aligned GFET fabrication process and the as prepared devices show good gate coupling and less parasitics, thus good dc and RF performances. The 100 nm gate-length graphene transistor exhibits a record fmax of 105 GHz. Our study shows a pathway to fabrication of high-performance graphene transistors for future application in RF circuits.
关键词： 石墨烯 场效应晶体管 射频技术 截止频率 振荡频率 2014中国国际石墨烯创新大会（Grap-China 2014）
主讲人：Prof. Zhihong Feng 机构：National Key Laboratory of ASIC,Hebei Semiconductor Research Institute
时长：0:12:53 年代：2014年
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