Graphene field-effect transistor（1）

2014中国国际石墨烯创新大会（Grap-China 2014）——Since the exfoliation of graphene from HOPG,the properties of graphene have been intensively investigated. The mobility of suspended graphene can reach as high as 105 cm2/Vs. The extremely high mobility is very attractive for radio-frequency (RF) application.Wafer-scale graphene has been grown by decomposition of the surface of SiC substrate and by chemical vapor deposition (CVD) on catalytic metal surfaces. The field-effect transistors (FETs) from wafer-scale graphene have been fabricated and demonstrated very good current gain cutoff frequency, fT. The integrated circuit based on graphene FET (GFET) has been also demonstrated. The gate dielectric film is very important for the transistor performances. Here we used a new kind of thin polymer layer as seed layer of dielectric film and fabricated FETs from graphene grown by CVD. The device performances have been investigated.

关键词： 石墨烯 迁移率 无线电频率 场效应晶体管 2014中国国际石墨烯创新大会（Grap-China 2014）

主讲人：研究员 Zhi Jin 机构：Microwave Devices and Integrated Circuits Department,Institute of Microelectronics,Chinese Academy of Sciences

时长：0:19:52 年代：2014年