Heterostructures of 2D Layered Materials for Atomically Thin Electronics and Optoelectronics（2）

2014中国国际石墨烯创新大会（Grap-China 2014）——Two-dimensional (2D) materials such as graphene or transition metal dichalcogenides (TMDs) have attracted considerable interest due to their atomically thin structures,unique electronic/mechanical properties, and exciting potential for creating a new generation of technologies that can transform diverse areas include electronics, energy and biomedicine. Here I will first give a brief overview of our research efforts on the synthesis of a wide range of 2D materials and exploration of diverse technological opportunities. I will then focus my discussion on exploring graphene and its heterostructures for the construction of a series of electronic and optoelectronic devices with unprecedented performance or unique characteristics not readily available in traditional silicon electronics. In particular, we will discuss the creation of ultra-high speed analog transistors from atomically thin graphene or TMD materials. We will describe a new design of vertical field-effect transistors and a highly efficient gate tunable pohotodetection/photovoltaic device based on vertical heterostructures of 2D materials. Lastly, we will discuss a new concept of vertical thin film transistors (VTFTs) that can enable a new generation of TFTs with unprecedented performance and flexibility, by using the heterostructures between graphene and conventional thin film semiconductors.

关键词： 石墨烯 过渡族金属二硫属化物 光电子学 2014中国国际石墨烯创新大会（Grap-China 2014）

主讲人：Prof. Xiangfeng Duan 机构：Department of Chemistry and Biochemistry,California NanoSystems Institute,University of California,Los Angeles

时长：0:14:27 年代：2014年