Fabrication and Properties of SiC Nanofiber/wire Paper(1)

2016中国国际功能材料大会(CIFM 2016)——Silicon carbide as a third generation semiconductor material is suitable for the fabrication of high-performance electronic and short-wavelength optic devices in severe environment, especially at high temperature.


关键词: silicon carbide;vanofiber;wire paper

主讲人:A.P. Jianjun Chen 机构:Zhejiang Sci-Tech University, China

时长:0:12:08 年代:2016年