Direct Growth of Two-Dimensional Crystals on Dielectrics at Low temperature for Nanodevices(1)

2016中国国际功能材料大会(CIFM 2016)——Moderate etching by a hydrogen plasma during plasma‐enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 40065°C without a catalyst (see picture).

关键词: direct growth;two-dimensional crystal;nanodevice 2016中国国际功能材料大会(CIFM 2016)

主讲人:Prof. Dacheng Wei 机构:Fudan University, China

时长:0:14:18 年代:2016年