The control of resistive switching by oxygen defect in Bi3.15Nd0.85Ti3O12 ferroelectric thin film

第六届海内外中华青年材料科学技术研讨会(2015)——Built the relationship between the RS and the destiny of oxygen defect. Developed the ways to enhance the RS properties fundamentally in the term of controlling the distribution of the oxygen defect. The stability of the RS can be improved in amorphous BNT without grain boundary and hysteretic polarization which affect the distribution of oxygen defect.


关键词: resistive switching;thin film;oxygen defect 第六届海内外中华青年材料科学技术研讨会(2015)

主讲人:H.J.Song 机构:Xiangtan University

时长:0:12:30 年代:2015年