The investigation of local electrical properties between graphene and GaN by Conductive atomic force microscope（1）

2014中国国际石墨烯创新大会（Grap-China 2014）——Graphene, owing to its distinctive band structure,has attracted an increasing interests in the application in electronic and optoelectronic devices over recent years.Graphene-semiconductor interface is of critical importance to the fabrication of high performance graphene based devices. Understanding the electrical properties of graphene on semiconductors is crucial to improve the performance of graphene devices. In this report, we systematically discussed the electrical properties of the exfoliated graphene and CVD-grown graphene on n-&p-GaN semiconductors using our home-build scanning near field multi-functional probe microscope system experimentally. Meanwhile, we established a theoretical model for calculating the Schottky barriers and the Fermi level shifts in graphene based on the traditional Schottky theory according to the special energy structure in graphene. And then, the wrinkles of single layer graphene contacted with either n-&p-GaN were found both forming ohmic contacts investigated by C-AFM.

关键词： 石墨烯 导电原子力显微镜 光电设备 理论模型 2014中国国际石墨烯创新大会（Grap-China 2014）

主讲人：研究员 Haijian Zhong 机构：Suzhou Insititute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences

时长：0:15:08 年代：2014年