Numerical Modeling of Reduction in Surface-Related Lags and Current Slump in GaAs FETs
IEEE TENCON 2013——We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.
关键词： GaAs FET 二维瞬态分析 瞬态特性 坍落度值 电流 IEEE TENCON 2013
主讲人：Professor K. Horio 机构：Faculty of Systems Engineering, Shibaura Institute of Technology
时长：0:18:29 年代：2013年
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